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Highly luminescent red emitting CdZnSe/ZnSe quantum dots synthesis and application for quantum dot light emitting diodes

Journal 2017 · IF 2.591 · 7(11): 3875-3884 · 发表于 2017 年 10 月 11 日
作者: Qin Zhang,Chao Nie,Chun Chang,Chenyang Guo,Xiao Jin,Yuancheng Qin,Feng Li,Qinghua Li
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摘要

Alloyed CdZnSe/ZnSe quantum dots with a spectral region from 620 to 690 nm are synthesized by a facile one-pot method. The core shell structure for CdZnSe/ZnSe quantum dots are prepared through two Se precursor injections without any purification steps and Zn precursor injections. The emission color is tuned by reaction time, reaction temperature, and the amount of Se. The CdZnSe/ZnSe quantum dots (QDs) show narrow size distribution, wide absorption spectrum, and a high photoluminescence (PL) quantum yield (QY) of up to 50% at room temperature. Electroluminencent light emitting diodes based on the resultant QDs deliver an external quantum efficiency as high as 6.8%.

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