Predispersed Carbocatalyst: Vertically Aligned Nitrogen-Doped Graphene Rooted on SiC Microspheres for Selective Oxidation

Graphical Stack it up ! Vertically aligned N-doped graphene rooted on SiC microspheres (NG on SiC) is prepared by precursor pyrolysis by using a lab-made continuous preparation system. The use of acetonitrile as a raw material promotes the lateral dimensions and improves the graphitization degree of NG on SiC significantly. The metal-free carbocatalyst NG on SiC is an effective and selective oxidation catalyst towards targeted C−H bond activation of ethylbenzene. Vertically aligned N-doped graphene rooted on SiC microspheres (NG on SiC) is prepared by precursor pyrolysis. One of the raw materials, acetonitrile, has three important effects that could facilitate the N-doping process effectively, promote the lateral dimensions and improve the graphitization degree of NG on SiC significantly. The metal-free carbocatalyst NG on SiC is an effective and selective oxidation catalyst towards targeted C−H bond activation of ethylbenzene. The unique nanostructure of NG on SiC is composed of predispersed graphene, which is expected to avoid harmful agglomeration during preparation, storage, transportation, and applications.