Facile preparation of Cu3BiS3 nanorods film through a solution dip-coating process

A novel Cu 3 BiS 3 nanorods film was prepared by a facile dip-coating method and its compositional, structural and optoelectronic properties were systematically characterized. A possible reaction mechanism of Cu 3 BiS 3 was also discussed briefly. Optical absorption investigation revealed that Cu 3 BiS 3 nanorods film has a direct band gap of 1.46 eV. Photoelectrochemistry of hydrazine free unannealed film displays a strong p-type photoresponse, as high as ∼1.0 × 10 −4 A/cm −2 at an applied potential of −0.5 V versus Ag/AgCl under the visible light irradiation. The photocurrent response measurement on the Cu 3 BiS 3 nanorods film sheds light on the potential application as a low-cost, high-reproducibility and high-yield nanorods preparing approach towards efficient Cu 3 BiS 3 photoelectricity and photovoltaic materials.