Chemical fixation of SO2 using norbornene with different side-chain groups and control of the physical properties of poly(olefin sulfone)

Photoresists involving polymer solubility and degradation play a crucial role in the manufacture of integrated circuits by photolithography. Conventional photoresists typically rely on a single switching mechanism based on a change in either polarity or molecular weight of the polymer. Here we report a new type of poly(olefin sulfone) as a photoresist which overcomes the drawback of poor dry etching resistance, solubility and thermal degradation. The effects of different side-chain groups (acetyl, acetoxy and carboxylic acid) of norbornene on the properties of poly(norbornene sulfone)s were analyzed with the aim of developing a new type of photoresist. Thermogravimetry and gel permeation chromatography results revealed that bond breaking occurred at different temperatures, because of the different side-chain groups, and the three side-chain groups affect the solubility and stability of the poly(norbornene sulfone)s. A novel photoresist material based on a poly(olefin sulfone) with different side-chain groups was synthesized and its physical properties examined. © 2017 Society of Chemical Industry