Facile fabrication of p-type CuxS transparent conducting thin films by metal sulfide precursor solution approach and their application in quantum dot thin films

We present a facile route for the fabrication of P-type Cu x S transparent and conducting thin films (TCTFs) using copper (I) oxide and butyl-dithiocarbamic acid as precursors by pulling method on glass. The as-deposited highly conductive crystalline Cu x S films showed high carrier concentration (∼3.11 × 10 22  cm −3 ), low electrical resistivity (∼1.02 × 10 −4  Ω cm) and conclusive p-type conduction. X-ray diffraction studies showed high crystallinity, and the optical transmission spectra in UV–vis–NIR region of such films were recorded, indicating that the transparency was over 75% with a band gap of 1.52 eV. The room-temperature sheet resistance increased from 9.9 to 302.4 Ω sq −1 with increasing baking temperature. The Cu x S/quantum dot bifacial thin films have been fabricated, and the experimental results indicated that luminescent, transparent, and conductive Cu x S/Cu-doped Zn y Cd 1-y S thin films have a very high potential application in thin film solar cells.