Sintering, microstructure and electricity properties of ITO targets with Bi2O3–Nb2O5 addition

High density and low electrical resistivity ITO targets were prepared by normal pressure sintering in oxygen with Bi 2 O 3 –Nb 2 O 5 addition. The relative density, microstructure and electrical properties of the ITO targets can be adjusted by changing the sintering temperature (1350   °C~1550   °C) and the content of Bi 2 O 3 –Nb 2 O 5 . The results show that the sintering temperature of ITO targets with Bi 2 O 3 –Nb 2 O 5 decreased from 1550   °C to 1450   °C, and the maximum relative density (99.6%) and the lowest electrical resistivity (1.78×10 −4   Ω   cm) were reached when the sintering temperature was 1450   °C with 5   wt% Bi 2 O 3 –Nb 2 O 5 . The carrier concentration increased as the increase of the contents of Bi 2 O 3 –Nb 2 O 5 and sintering temperature. The mobility first increased, and then decreased above 1450   °C as the sintering temperature increased.