摘要
Taking the importance of uniform size catalysts and the unfavorable effects of residual metal catalysts into consideration, herein, we develop a facile way which utilizes the typical and facile semiconducting technique namely atomic layer deposition (ALD) to prepare non-metallic Al 2 O 3 catalysts for narrow diameter single-walled carbon nanotube (SWNT) arrays growth. As a result, we obtained SWNT arrays with narrow-diameter distribution of 1.26 ± 0.033 nm on the a-plane sapphire substrates . Moreover, the relationship between catalysts and SWNTs were explored. These optimized conditions pave an avenue for narrow diameter even chirality distribution in SWNTs growth, which promotes the development of structure-controlled and relative applications of SWNTs.
危险品化学品经营许可证(带存储)