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Evidence of the pressure-induced conductivity switching of yttrium-doped SrTiO3

Journal 2016 · IF 2.209 · 28(47): 475501 · 发表于 2016 年 9 月 16 日
作者: LiDong Dai,Lei Wu,HePing Li,HaiYing Hu,YuKai Zhuang,KaiXiang Liu
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摘要

The electrical transport properties of undoped and yttrium-doped strontium titanate (Sr(Ti1 – xYx)O3 – δ, x  =  0, 0.02) under high pressure were investigated with in situ impedance spectroscopy measurements. A pressure-induced conductivity switching for undoped and 2 mole% Y-doped strontium titanate is observed at around ~10.0 and 7.0 GPa respectively, which are caused by a cubic to tetragonal I4/mcm phase transition. The decrease of the phase transition point of 2 mole% Y-doped strontium titanate can be attributed to larger Y3+ atoms occupying the B-site and the creation of more oxygen vacancies, which lead to octahedra tilting and symmetry breaking. The results of the voltage-bias dependence of grain-boundary impedance of undoped and 2 mole% Y-doped strontium titanate at different pressures revealed that Schottky-type potential barriers formed at grain boundaries are the key factor for the accumulation of oxygen vacancy at the interface under pressure.

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