Synthesis of compositionally controllable Cu2(Sn1−xGex)S3 nanocrystals with tunable band gaps

In this work, we show that compositionally controlled Cu 2 (Sn 1–x Ge x )S 3 nanocrystals can be successfully synthesized by the hot-injection method through careful tuning the Ge/(Sn+Ge) precursor ratio. The band gaps of the resultant nanocrystals are demonstrated to be linearly tuned from 1.45 to 2.33 eV by adjusting the composition parameter x of the Ge/(Sn+Ge) ratio from 0.0 to 1.0. The crystalline structures of the resultant NCs have been studied by the X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), select area electron diffraction (SAED), and Raman spectroscopy. A ligand exchange procedure is further performed to replace the native ligands on the surface of the NCs with sulfur ions. The photoresponsive behavior indicates the potential use of as-prepared Cu 2 (Sn 1–x Ge x )S 3 nanocrystals in solar energy conversion systems. The synthesis of compositionally controlled Cu 2 (Sn 1–x Ge x )S 3 nanocrystals reported herein provides a way for probing the effect of Ge inclusion in the Cu-Sn-S system thin films.