Ultra-low-κ HFPDB-based periodic mesoporous organosilica film with high mechanical strength for interlayer dielectric

A novel bridged organosilane precursor with star-shaped construction, [hexfluoropropane-2,2-diyl)dibenzyl-bridged organosilane (HFPDBO)], is prepared by facile organic synthesis method. The resultant HFPDBO precursor is mixed with porogen and acid catalyst to prepare periodic mesoporous organosilica (PMO) thin film via evaporation-induced self-assembly after spin-coating procedure. All the as-prepared HFPDB-based PMO thin film has been characterized by Fourier transform infrared spectroscopy, nuclear magnetic resonance spectrum, scanning electron microscopy, transmission electron microscope, and small-angle X-ray diffraction, respectively. Thereinto, the HFPDB-based PMO thin film with weight ratio of porogen to precursor (0.75:1) possesses excellent dielectric property (1.58@1 MHz of dielectric constants), high mechanical property (5.54 ± 0.11 GPa of Young’s modulus) and hydrophobic property (90.1° of water contact angle) simultaneously. These low dielectric constant, high mechanical strength, and the hydrophobicity suggest potential application of the HFPDB-based PMO thin films as low-k materials in microelectronics.