摘要
Heterovalent doping represents an effective method to control the optical and electronic properties of semiconductor nanocrystals (NCs), such as the luminescence and electronic impurities (p-, n-type doping). Considering the phase structure diversity, coordination varieties of Cu atoms in Cu 2 S NCs, and complexity of Cu doping in II-VI NCs, monodisperse Cu 2 S NCs with pure hexagonal phase were synthesized firstly. Then through cation exchange reaction between Cd ions and well-defined Cu 2 S NCs, dominant Cu(I) doped CdS NCs were produced successfully. The substitutional Cu(I) dopants with controllable concentrations were confirmed by local atom-specific fine structure from X-ray absorption near edge structure (XANES), extended X-ray absorption fine structure (EXAFS) spectroscopy, elemental analysis characterizations from X-ray photoelectron spectroscopy (XPS) and the electron spin resonance (ESR) measurement. The dominant and strong Cu(I) dopant fluorescence was verified by their absorption and photoluminescence (PL) spectra, and PL lifetime. Finally, the band positions and the p-type conductivities of the as-prepared Cu 2 S and Cu(I) doped CdS NCs were identified by ultraviolet photoelectron spectroscopy (UPS) measurements. The high monodispersity of NCs enables their strong film-scale self-assembly and will hasten their subsequent applications in devices.
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