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Removal of silicon in acid leaching and flocculation processes during zirconium oxychloride octahydrate production

Journal 2014 · IF 2.086 · 发表于 2014 年 1 月 28 日
作者: Ran Liu,Tianyan Xue,Jing Song,Yu Wang,Tao Qi,Jingkui Qu,Ailing Du
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摘要

The efficiency of silicon removal technology by acid leaching and flocculation during zirconium oxychloride octahydrate (ZrOCl 2 ⋅8   H 2 O) production has been improved. The optimum conditions of acid leaching were found to be as follows: transiton material, 300   g; HCl (6   mol/L), 600   mL; leaching time, 4   h; and leaching temperature, 100   °C. The nonionic polyoxyethylene lauryl ether (AEO9) was adopted as the flocculant. The optimum flocculation conditions were found to be as follows: temperature, 40   °C; flocculant amount, 10   ml (concentration 1%); time, 1   h. The zirconium oxychloride solution after purification contained 36   ppm SiO 2 and 160   g/L ZrOCl 2 . The polymerization and flocculation mechanisms of silicic acid were analyzed. Results of Fourier-transform infrared, scanning electron microscopy, nuclear magnetic resonance, and Brunauer–Emmett–Teller analyses showed the main transformation and properties of the products in the acid leaching and flocculation processes.

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