Synthesis and microwave dielectric properties of Zn2SnO4 ceramics

Zn 2 SnO 4 ceramics were synthesized by the solid-state method. B 2 O 3 was added into the system to lower the sintering temperature . B 2 O 3 -doped Zn 2 SnO 4 materials were characterized by X-ray diffraction (XRD), electron microscopies (SEM/TEM/HRTEM/EDS), Raman and XPS spectroscopies. The inverse-spinel Zn 2 SnO 4 ceramics (containing 1   wt% B 2 O 3 ) sintered at 975   °C exhibited good microwave dielectric properties : ε r =9.3, Q × f =62,000   GHz and τ f =−50   ppm/°C. Zn 2 SnO 4 ceramics with low sintering temperatures are promising candidate materials for low-temperature cofired millimeter-wave devices.