Preparation of TCPP: block copolymer composites and study of their memory behavior by tuning the loading ratio of TCPP in the polymer matrix

In this paper, we report the synthesis, properties and electrical memory characteristics of block copolymer PStCH-b-P4VP and its TCPP composites. Both the optical absorption and photoluminescence indicate the strong interaction between the P4VP blocks and TCPP. The electrical switching behavior can be tuned through utilizing the loading ratio of TCPP in the PStCH-b-P4VP matrix. The memory device characteristics of the composites with 0%, 1% and 3% of TCPP in the PStCH-b-P4VP matrix are WORM, DRAM and DRAM, respectively. The OFF state for PStCH-b-P4VP and the 3% TCPP:PStCH-b-P4VP composite memory device can be fitted with the Poole–Frenkel (PF) emission and space-charge-limited-current (SCLC), respectively. Both of the ON-state currents are fitted with the Ohmic model. The 3% TCPP composite-based device exhibits a lower threshold voltage than the 1% TCPP composite-based device. The present study suggests that the electrical memory characteristics could be efficiently tuned by the PStCH-b-P4VP (donor)/TCPP (acceptor) ratio, which is good for potential application in polymer composite memory devices.