摘要
Two-dimensional (2D) materials are widely used in various optical, electronic, and optoelectronic devices. However, the realization of visible light emission and near-infrared photodetection functions in a single device remains a challenge. Here, an integrated dual-functional device is developed by manipulating the excitons of WS 2 within a graphene/hBN/WS 2 /graphene heterostructure. When operating as a photodetector at low external bias, the dark current is well suppressed by the hBN layer. With the excellent two-photon absorption (TPA) property of monolayer WS 2 , the photoresponse range of the photodetector can be extended to the near-infrared region, achieving a responsivity of up to 0.19 mA/W at 1145 nm. At high external bias, the device can work in light-emitting mode, in which the electroluminescence (EL) wavelength can be tuned via gate voltage. This atomically thin device opens up possibilities for applications in miniaturized display, sensing, and monitoring systems.
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