An ultra-thin organosiloxane film with excellent corrosion resistance based on self-crosslinking of multiple polymerization sites prepared by PECVD on copper alloy

Intelligent, integrated, and environmentally sustainable electronic products have become a major trend, making the protection of electronic products a top priority. Low surface energy organosiloxane polymer films are very attractive for electronic protection, but their high porosity is not conducive to the protection of electronic devices. To solve this problem, an ultra-thin 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane polymer film (p-V4D4) with very low porosity was deposited on a copper alloy by PECVD self-crosslinking. Compared with triethoxyvinylsilane polymer film (p-VTES) and divinyltetramethyldisiloxane polymer film (p-DVTMS), the p-V4D4 has more polymerization sites, higher cross-linking density, and lower porosity. Benefiting from the synergistic effect of good hydrophobicity and low porosity structure, the p-V4D4 offers 99.99% corrosion suppression efficiency, 48 h of salt spray corrosion resistance, and up to 23 days of immersion in 3.5 wt% NaCl. Moreover, the dense structure gives it good mechanical stability and low dielectric properties. These findings provide a new pathway for synthesizing films with efficient anti-corrosion properties and have potential application prospects in electronic protection and microelectronics.