Artificial oxyanion reservoir accelerates oriented ionic migration in MXene-based synaptic memristor for neuromorphic computing

Application of two-dimensional MXenes (Ti 3 C 2 T x )-based memristors in neuromorphic computing is restricted due to the unsatisfied power consumption, consistency and tolerance, and the indistinct resistive switching mechanism. Herein, an elaborately designed Al/Ti 3 C 2 T x /SnO 2 /ITO memristor to alleviate the above issues, and the device exhibits a boosted switching ratio of about 10 3 , excellent durability over 500 cycles, and a switching voltage of <0.6 V, and shows good retention characteristics. Theoretical analysis manifests that the insertion of the SnO 2 layer promotes the formation and rupture of conductive filaments as the optimized local electric field and the concentration gradient of oxyanions tremendously favors oriented ionic migration and reduces the transition voltage. This work not only provides a feasible and effective way to enhance the memristive performance of two-dimensional materials but also further demonstrates the advantages of two-dimensional materials in neural network computing architectures.