Ce-doped LaMnO3 ceramic hole-transporting material synthesis for quasi-solid-state quantum dot-sensitized solar cells as efficient electrolyte

Considering the instability of quantum dot sensitized solar cells (QDSSCs) due to the leakage and volatileness of polysulfide electrolyte. We explored the possibility of applying Ce doping LaMnO 3 ceramic hole transport material (LaMnCe) inside QDSSCs. LaMnO 3 oxides possess high electronic conductivity. Doping of Ce can adjust the band position of materials to match Zn-Cu-In-Se (ZCISe) QDSSCs. LaMnCe was added to the photoanode by spin method and further constructed into the quasi-solid state QDSSCs. The QDSSCs can achieve the PCE of 9.15 % (V oc is 0.66 V, J sc is 24.49 mA·cm −2 , FF is 57.80), which is 33 % higher than the standard liquid QDSSCs. The average electron lifetime of quasi-solid-state QDSSCs prepared with LaMnCe is 5 % higher than that of liquid QDSSCs, and the stability performance of the QDSSCs has been raised significantly.