Constructing highly effective CuS/In2S3 Z-scheme heterojunction with boosted charge transfer for enhanced photocatalytic performance

Semiconductor photocatalysis technology is a promising technique for the environmental remediation and new energy development. It is of importance to design the photocatalysts with wide spectral response, high carrier separation efficiency and high redox capacity for the photocatalysis. Herein, a CuS/In 2 S 3 Z-scheme heterojunction is designed and constructed by a one-step hydrothermal method. UPS, free radicals trapping experiments and ESR confirm that the electrons are transferred from CuS to In 2 S 3 through the Z-Scheme mechanism. Benefiting from the construction of Z-scheme heterostructure, the separation of photogenerated carriers is more effective and the redox capacity of the pristine materials reserves the maximum. Compared to pure CuS and In 2 S 3 , CuS/ In 2 S 3 -4 represents the best photocatalytic performance boosting degradation rates of MBT that are 28.1 and 21.7 times higher than this of the CuS and In 2 S 3 , respectively. In the photocatalytic process, ·O 2 - and h + are the main active species. Bean sprout planting experiment showed that the toxicity of the solution decreased after degradation. This work provides a new method of constructing a high-performance Z-scheme heterojunction material for improving the activity and efficiency of the photocatalysts.