Crosslinked silsesquioxane with high thermal stability and low dielectric constant by the autopolymerization of Q-type H-POSS

A novel method was developed for constructing cross-linked silsesquioxane, utilizing Q-type H-POSS as a precursor. The Piers-Rubinsztajn (P–R) like reaction of Q-type H-POSS was catalyzed by B(C 6 F 5 ) 3 , resulting in the production of a prepolymer containing partial Si–H. Upon heating at high temperature in air, the prepolymer transformed into an insoluble and infusible cross-linked polymer, named Cured poly(H-POSS). This polymer exhibited high thermostability, with a 5 % weight loss temperature ( T 5d ) of 709 °C and a residue of 92 % at 800 °C. Additionally, Cured poly(H-POSS) exhibited high transparency, with a transmittance of 90 % in the 400–800 nm wavelength range, and favorable dielectric properties, with a dielectric constant ( D k ) of 2.88 at 14 GHz.