摘要
Vacancy engineering presents an appealing method for modifying the electronic structure of spinel architectures. However, based on well-defined vacancy concentrations, how to design anionic vacancies to modulate electromagnetic parameters as well as electromagnetic wave absorption (EMA) properties is less studied. Here, NiCo 2 Se 4 spinel structures were prepared using different selenization methods, and the Se vacancy defect concentration was controlled by changing the annealing temperature, thus regulating the EMA properties. Among them, the design of the hollow structure effectively enhanced the EMA performance. Moreover, the increase of Se vacancy concentration increases the conductivity loss while regulating the electronic structure, and also acts as an unsaturated site to induce the formation of dipoles to optimize the polarization loss. The effective absorption bandwidth (EAB) of NiCo 2 Se 4 -130 reaches 8.48 GHz at 2.4 mm at the highest Se vacancy concentration. This work establishes a direct relationship between vacancy concentration and the electromagnetic wave dissipation capability, offering valuable insights for the development of advanced EMA materials.
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