摘要
In this work, black phosphorus quantum dots (BPQDs) and NiFe layered double hydroxide (NiFe-LDHs) were loaded on BiVO 4 photoanode for promoting photoelectrochemical (PEC) water splitting. As a narrow bandgap p-type semiconductor with high work function, BPQDs could not only form p-n junction with BiVO 4 to enhance light harvest but also construct Schottky junction for charge carriers separation. More importantly, introduction of BPQDs facilitates the transformation of Ni(OH) 2 into NiOOH so as to improve the water oxidation capacity at low bias voltage. Density functional theory (DFT) calculation demonstrates that introduction of BPQDs accelerates the α/γ phase transition dynamically and thermodynamically, thus BiVO 4 /BPQDs/NiFe-LDHs photoanode achieves photocurrent density of 5.28 mA cm −2 at 1.23 V RHE , AM 1.5 G and maintains good stability. In summary, this work provides new ideas for constructing efficient hole extraction layers on photoelectrode, well expanding the application of BPQDs in PEC water splitting.
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