Enabling efficient persistent luminescence in CdSiO3 phosphors through In3+ doping for optical information storage and dynamic encryption

CdSiO 3 , with its distinctive crystal structure, has become a subject of considerable interest as a potential silicate host for long persistent luminescence (LPL) phosphors. However, in most cases, impurity phases in the host adversely affect the persistent luminescence (PersL) performance. Furthermore, there is still a lack of insightful understanding regarding the role of non-rare-earth (non-RE) In 3+ ions in the enhanced blue PersL of CdSiO 3 . Here, pure-phase monoclinic CdSiO 3 phosphor is synthesized through a solid-state reaction method and the intense blue PersL is achieved by aliovalent doping of In 3+ . Combining experimental results with theoretical calculation, we reveal that the intrinsic defects of O and Cd vacancies in CdSiO 3 are the trap centers for excited electrons and holes, respectively. In 3+ doping adjusts the distribution and increases the density of intrinsic defect-related traps, thus producing the intense blue PersL in CdSiO 3 :In 3+ . Moreover, the generality of In 3+ in enhancing the PersL properties is validated in CdSiO 3 :Mn 2+ ,In 3+ and CdSiO 3 :RE 3+ ,In 3+ (RE = Tb, Dy, Pr, Sm, Eu) phosphors, enriching the spectrum of PersL emission colors. Encouraged by the outstanding optical properties of CdSiO 3 :Mn 2+ ,In 3+ , we demonstrate dual-mode information storage-reading and dynamic information encryption applications. This advancement opens new avenues for the application of optical information security. This work emphasizes the key role of In 3+ in adjusting the distribution and increasing the density of intrinsic defect-related traps. Consequently, it reveals a clear mechanism for enhancing PersL through In 3+ doping and expands the range of LPL phosphors with broad spectral selectivity.