Evaluation of chemical mechanical polishing characteristics using mixed abrasive slurry: A study on polishing behavior and material removal mechanism

Chemical mechanical polishing (CMP) is currently the most widely used method for material removal and surface planarization of glass. An environmentally friendly method of improving polishing performance by using a mixed abrasive slurry of ceria and diamond was proposed in this study. The results of polishing experiments showed that compared with single ceria abrasive, the materials removal rate (MRR) of the mixed abrasive slurry increased from 82.7 nm/min to 109.6 nm/min, while the surface roughness (Ra) decreased from 26.4 nm to 0.6 nm after polishing. An amorphous reaction layer formed during the CMP process was observed directly using transmission electron microscopy. Thermodynamic analysis was conducted to investigate the interfacial chemical reactions during the polishing process. A model was proposed to describe the mechanism of the materials removal.