Excellent Energy Storage and Photovoltaic Performances in Bi0.45Na0.45Ba0.1TiO3-Based Lead-Free Ferroelectricity Thin Film

Inorganic dielectric films have attracted extensive attention in the field of microelectronic and electrical devices because of their wide operating temperature range, small size, and easy integration. Here, we designed and prepared eco-friendly (1-x)Bi0.45Na0.45Ba0.1TiO3-xBi(Mg1/3Nb2/3)O3multifunctional ferroelectric thin films for energy storage and photovoltaic. The results show that Bi(Mg1/3Nb2/3)O3can effectively improve the energy storage performance. At x = 0.05, the energy storage density and efficiency are as high as 73.1 J/cm3and 86.2%, respectively, and can operate stably in a wide temperature range. The breakdown field strength of the thin films increased significantly, and the analysis showed that the addition of Bi(Mg1/3Nb2/3)O3caused a change in the internal conduction mechanism. At the same time, the generation of polar nanoregions increases the relaxation characteristics, thus improving the energy storage properties. In addition, the thin film material also has excellent ferroelectric photovoltaic properties. This work represents a new design paradigm that can serve as an effective strategy for developing advanced multi-functional materials.