摘要
In response to the challenges posed by limited portability and high costs associated with current fractional exhaled nitric oxide (NO) detection equipment, a miniaturized metal oxide semiconductor (MOS) gas sensor has been developed for NO detection, leveraging the principles of MOS gas sensors and MEMS technology. This sensor employs 2 mol% Ta-WO 3 as its sensitive material, achieving a NO detection limit of 5 ppb, along with rapid response and recovery times of 30 seconds and 10 seconds respectively. It also exhibits exceptional selectivity and stability. During tests involving both single-component gases and mixtures containing twelve interfering gases, the response amplitude and interference rate for NO remained below 5 ppb. This indicates that the 2 mol% Ta-WO 3 sensor demonstrates commendable precision and practicality. The choice of sensitive material, along with its performance optimization methods, holds significant importance for advancing research in NO detection as well as enhancing the selectivity of MOS gas sensors.
危险品化学品经营许可证(带存储)