摘要
Nitrogen defect engineering has been deemed to be a promising strategy to overcome the inherent shortcomings, i.e., sluggish charge separation and limited spectral response range, of g-C 3 N 4 photocatalyst . Herein, the construction of nitrogen-deficient g-C 3 N 4 has been developed via a simple approach of modulating the type of urea precursor. The experimental investigation and theoretical calculations reveal that this novel route endows g-C 3 N 4 with distinctive nitrogen defects, accompanying the decreased bandgap and the formation of midgap states under the conduction band edge , thus remarkably broadening the visible-light harvesting capability. Furthermore, the N defect also results in enhanced electrical conductivity , which greatly improves the charge carrier transfer and separation for photoredox reaction. As a result, the novel g-C 3 N 4 , named DCN, delivers a significantly high visible-light-responsive H 2 evolution rate of 6.0 mmol h −1 g −1 under visible light irradiation, which is more than 5 times higher than that of the g-C 3 N 4 (CN) synthesized using the common urea precursor. This work opens a novel avenue to fabricate nitrogen defect-regulated g-C 3 N 4 for highly efficient H 2 evolution and must intrigue a new wave of research upsurge on this kind of photocatalyst .
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