High-performance self-powered perovskite photodetectors enabled by Nb2CTx-passivated buried interface

Defect-induced charge carrier recombination at the interface of charge transport layers and perovskite layer is a major limiting factor in the performance of perovskite photodetectors. Buried interface defect passivation presents a distinctive approach to reducing dark current and improving responsivity and detectivity in photodetectors. Herein, we propose a novel strategy for passivating buried interface defects by incorporating Nb 2 CT x at the perovskite/hole transport layer (HTL) interface to enhance optoelectronic performance of self-powered perovskite photodetectors. These strategies effectively improve charge transfer within the HTLs and suppress charge carrier recombination. Without an external bias, utilizing the Nb 2 CT x buried interface layer enables the achievement of exceptionally high responsivity and detectivity values of 0.23 A/W and 1.27×10 11 Jones, respectively, significantly outperforming the reference device. Moreover, our findings reveal an impressively broad linear dynamic range of approximately 140 dB, accompanied by rapid rise and fall times of 14.4 μs and 2.10 μs, respectively. This study illustrates a straightforward yet efficient approach for passivating buried interface defects using Nb 2 CT x in photodetectors, making Nb 2 CT x a promising material for applications in photodetectors, light-emitting diodes, photovoltaics, sensors, and more.