Impact of phospho-oxygen derivatives on crystallinity and optoelectronic properties of CsSnBr3 LED

Tin-based perovskite light-emitting diodes (PeLEDs) have emerged as promising candidates for future optoelectronic applications due to their non-toxic properties. However, their electroluminescence (EL) performance still lags behind that of lead-based PeLEDs, primarily due to the poor crystal quality of tin-based perovskite films. In this work, inspired by advances in lead-based PeLEDs, we integrated Lewis base derivatives with phospho-oxygen functional groups of varying substituents into tin-based perovskites. This approach allowed us to analyze the interaction between these groups and the perovskite matrix. The introduction of additives at optimal concentrations reduced the grain size of CsSnBr 3 , improved its grain morphology, and enhanced the film quality, resulting in better photoelectric performance. Consequently, the developed red tin-based PeLEDs demonstrated a five-fold increase in maximum brightness (50 cd/m 2 ) and a ten-fold increase in operational lifetime (79.2 s), alongside stable color emission under varying voltages. This work offers a viable pathway for advancing the performance and stability of tin-based PeLEDs, paving the way for future innovations in this field.