Influence of electric field and light soaking effect on photoluminescence of MAPbI3 thin films

CH₃NH₃PbI₃ (MAPbI₃) perovskites have demonstrated significant potential in optoelectronic devices. However, the stability and performance of these applications are critically influenced by electric fields and light soaking effect (LSE). The mechanisms by which these factors affect the photoluminescence (PL) and time-resolved photoluminescence (TRPL) characteristics of MAPbI₃ thin films are not yet fully understood. In this study, we constructed a symmetric lateral electrode structure (ITO/MAPbI₃/ITO) to systematically analyze the impact of varying electric field strengths and LSE wavelengths on the PL and TRPL characteristics of MAPbI₃ thin films. Our experimental results reveal that bias voltage significantly influences carrier recombination processes and transfer rates. Both forward and reverse bias voltages exhibit similar effects on the symmetric lateral electrode ITO/MAPbI 3 /ITO structure. As the bias voltage increases, the steady-state PL intensity of MAPbI 3 films decreases, and the TRPL decay time shortens. Additionally, our studies on different LSE indicate that higher photon energy has a more pronounced impact on the TRPL lifetime of MAPbI 3 films. This research elucidates the mechanisms by which electric fields and LSE affect the photophysical properties of MAPbI 3 perovskite films, providing new insights for optimizing the performance of these materials in optoelectronic devices.