Large-scale Preparation of Black CeOx with Stable Oxygen Vacancies

Oxygen vacancy in ceria is a crucial regulation factor for modifying materials. The reduced oxygen vacancy will undergo rapid recombination and deactivation due to the imbalance perturbation of active oxygen species, thereby restricting their larger-scale application. In this work, we proposed a strategy to stabilize oxygen vacancy in four black CeO x (Si) (0< x <2) by quartz sand doping reduction. The formation of a Ce-O v -Si (O v denoted as oxygen vacancy) interface, instrumental in constructing stable oxygen vacancies, is facilitated by rich hydroxyl groups. Characterizations of CeO x (Si) reveal that the heterogeneous hydrogen at the Ce-O-Si interface encourages the lattice distortion in ceria to obtain stable oxygen vacancies. Guided by the reusable feature, quartz sand doping reduction is a facile and feasible strategy to stabilize the oxygen vacancy of black CeO x for advanced materials on a large scale.