摘要
Solution-processed CsPbI 3 perovskite quantum dots (PQDs) have attracted enormous attention in both photovoltaic and electroluminescent applications in recent years. However, the surface defects of CsPbI 3 PQDs in the ligand exchange procedure still suffer the challenge of imperfect passivation , leading to poor device performance and ambient stability. In this work, we propose a modified surface ligand management to deposit CsPbI 3 PQD films using a layer-by-layer (LBL) solid-state exchange strategy, and its applications in photovoltaic and electroluminescent devices are studied. The conjugated phenethylammonium iodide (PEAI) ligand, acting as a short-chain ligand with a phenyl group (PEA + ion) for encapsulating the CsPbI 3 PQDs during the LBL procedure, which can both realize enhanced inter-dot coupling and defects passivation compared with conventional post-treatments. We further demonstrate the balanced transport and injection of electrons and holes within the PEAI-LBL based CsPbI 3 PQD films. With this approach, the CsPbI 3 PQD solar cells based on PEAI-LBL yielded a champion power conversion efficiency (PCE) of up to 14.18% with a high open voltage of 1.23 V, along with obviously electroluminescent red emission properties in one device. Meanwhile, the unencapsulated devices exhibited excellent stability under a high-humidity environment. This strategy should accelerate advancement in utilizing PQDs for bifunctional optoelectronic applications .
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