Oxygen vacancy-assisted construction of phosphorus-doped layers to improve the lithium storage performance of T-Nb2O5

T-Nb 2 O 5 is a promising anode material for high power density lithium-ion batteries (LIBs) due to its fast lithium storage capacity and safe lithiation potential. However, its practical application is hindered by its low electronic conductivity. In this work, we improved the electrochemical performance of T-Nb 2 O 5 by surface P-doping and the N-doped carbon substrate. Surface P-doping guided by defects enhances the electronic conductivity of the material, which can synergize with N-doped carbon substrates to form a conductive network and accelerate the lithiation/delithiation process. More importantly, surface P-doping does not destroy the internal crystal structure of the material, ensuring the stability of the Nb 2 O 5 during the charge/discharge process. When used as the anode for LIBs, the Nb 2 O 5 -P/N-C exhibits great cycling stability and high-current charge/discharge performance. The specific capacity of Nb 2 O 5 -P/N-C exceeds 116 mAh g −1 after 1000 cycles at 1000 mA g −1 . This work presents a novel approach to improve the electrochemical performance of T-Nb 2 O 5 .