摘要
Antimony sulfide (Sb 2 S 3 ) is regarded as one of the potential candidates for the next generation of photovoltaic absorber due to its excellent photoelectric properties. However, the selection and optimization of the hole transport layer (HTL) is still a major challenge for efficiency breakthrough of the Sb 2 S 3 solar cells. In this work, lead sulfide (PbS) is deposited as a HTL of the Sb 2 S 3 device by thermal evaporation for the first time. A high quality PbS films is conformally coated on the Sb 2 S 3 rear surface by regulating the feeding amount, which thanks to the mass transfer mechanism of Ostwald ripening by scrutinizing the film growth kinetics. Meanwhile, both the valence band maximum (VBM) and Fermi levels are shifted down by a deliberate oxygen doping under a low vacuum ambient, which effectively reduces the offset between Sb 2 S 3 and carbon electrode and then accelerates hole collection. Finally, it delivers an impressive photovoltaic conversion efficiency of 6.63% for carbon-based Sb 2 S 3 solar cells, coupled with a V oc of 779 mV, J sc of 14.9 mA cm −2 and FF of 57.13%, which is 13% higher than that under high vacuum condition.
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