Preparation and analysis of PEDOT:PSS/P(VDF-HFP) interpenetrating all-organic dielectric films with high permittivity and low tanδ

P(VDF-HFP) is widely used in transistors, electret and artificial skin due to its excellent dielectric properties . In order to dramatically improve its dielectric constant, conductive fillers are used for doping, but the compatibility is not optimistic between the fillers and the PVDF . In this paper, PEDOT:PSS/P(VDF-HFP) all-organic films with interpenetrating network structure were prepared by the addition of H 2 O. The dielectric constant of the film with 0.5  wt % PEDOT:PSS reached up to 323 and the tanδ was only 0.48 (1 k Hz, 18 °C). The addition of the H 2 O made the small amount of PEDOT:PSS evenly distribute in the P(VDF-HFP), as a result, the percolation threshold decreased. Besides, molecular chains of PEDOT:PSS were overlapped to form a uniform network. This paper provided a novel preparation method for a uniform film with two kinds of matters with different compatibility.