Rich oxygen vacancies mediated metal-insulator transition materials toward ultrasensitive sensing and energy conversion

Regulating structural phase transitions of metal insulator transition (MIT) correlated materials is an ideal approach to modulate their properties. However, due to phase transition hysteresis, ultrasensitive electron transition is difficult to achieve. Here, we develop a convenient method via Fe ions surface doping-induced oxygen vacancies (OVs) at the Ti 3 O 5 surface to enable ultrasensitive electronic transitions. The Fe doping promotes the formation of free electrons , which is attributed to the reduced bandwidth, making it relatively easy for valence band electrons to leap to the conduction band . The formation of OVs increase the electron concentration and enhance the electronic conductivity (2.49×10 −4 S/cm) at low temperatures, resulting in an ultrasensitive sensing over a wide temperature range before metal insulator transition. This unique property facilitates its application in fire warning with ultrasensitive sensing (response time 0.63 s, and response temperature 150 °C) and good durability. Moreover, the as-obtained MIT correlated material with rich-OVs structure exhibits excellent oxygen sensing and photothermal conversion properties. These results offer a novel design for MIT correlated materials and provide an innovative insight for modulating their multifunctional properties.