摘要
Tin disulfide (SnS 2 ), is an emerging two-dimensional metal sulfide material with high electronegativity and suitable bandgap, making it a promising candidate for NO 2 sensors. In this study, SnS 2 thin sections with different exposed crystal planes were prepared from two different sulfur sources, and the effects of crystal sections on the growth of SnS 2 and its NO 2 sensing performance were studied. SnS 2 micro sheets with (1 0 1) exposed crystal plane (SnS 2 -M) showed a smaller specific surface area than SnS 2 nano sheets with (1 0 0) exposed crystal plane (SnS 2 -N). However, the crystal structure grown along the (1 0 1) plane direction provides a more favorable pathway for NO 2 molecules, enhancing gas molecule adsorption and desorption, and exhibiting excellent performance in terms of sensitivity, repeatability, and response time. The gas sensing performance is not only influenced by the specific surface area but also significantly differs due to the exposure of different crystal planes. This result provides a certain reference value for the preparation of SnS 2 with different crystal plane orientations for enhanced NO 2 sensing.
危险品化学品经营许可证(带存储)