Spin-Coating Deposited SnS2 Thin Film-Based Memristor for Emulating Synapses

2D materials have garnered significant attention owing to their substantial potential across various applications, including thin-film electronics, optoelectronics, and sensor devices, particularly, the synthesis and deposition methods of the 2D materials are crucial. In this study, thin films of tin disulfide (SnS 2 ), a layer-structured metal dichalcogenide, are deposited on an indium tin oxide (ITO) glass substrate through a spin-coating process to prepare a sandwich-structured resistive switching (RS) device (ITO/SnS 2 /ITO) by following magnetron sputtering of ITO as top electrode. Notably, the solution-phased spin-coating deposition method provides an efficient approach to enhance device performance through ion doping. By incorporating calcium ions (Ca 2+ ), the devices exhibit the potential to achieve outstanding resistive switching performance and synapse functionality. With a DC sweep, an on/off resistance ratio exceeding 100 can be sustained without degradation for up to 5000 cycles. Furthermore, the devices exhibit diverse synaptic functions, including short-term and long-term plasticity (STP, LTP) in both potentiation and depression processes, spike-timing-dependent plasticity (STDP), and paired-pulse facilitation (PPF). The transition in electrical resistance and synaptic function can be attributed to the migration of doped Ca 2+ along the grain boundary and interlayer space of layer-structured SnS 2 films.