摘要
In this paper, CsPbX 3 @SiO 2 (X = Cl, Br) with cubic morphology and stable optical properties have been developed. The average thickness of the SiO 2 shell is 2 ∼ 6 nm, which has the effect of protecting CsPbX 3 and isolating the external environment, passivating the surface and reducing the defect density, thus greatly improving the stability of CsPbX 3 PQDs. Based on this, the advantages of APTES as a preparation system CsPbX 3 @SiO 2 is revealed, the mechanism diagram is drawn and the stability improvement mechanism CsPbX 3 @SiO 2 is analyzed in detail, which provides a new idea for the stability improvement of CsPbX 3 perovskite quantum dots.
危险品化学品经营许可证(带存储)