Strain effect on thermal conductivity of 3C-SiC nanowire

Strain provides an additional mechanism in tuning the thermal/electrical properties of nanostructures and therefore has triggered lots of interest in recent years. However, experimental research about the strain effect on the thermal conductivity of nanowires is still limited, especially in the low-temperature range, which is important in understanding the physics of strain-induced regulation in thermal conductivity. Here, we present thermal transport measurements of bent silicon carbide nanowires at temperatures ranging from 20 to 300 K. Reduction in thermal conductivity compared to their straight counterparts is observed. More specifically, the relative change is up to 55% at 20 K and descends with temperature, which is due to the inhomogeneous strain-induced phonon scattering. This study will deepen the understanding of thermal properties in nanostructures with strain.