摘要
MXenes are remarkable 2D materials for microwave absorption applications, with respect to physical and chemical properties. However, their elevated electrical conductivity and impedance mismatch results in a diminished microwave absorption rate. To overcome these issues, we have prepared TiVCrC 2 T x and Ti 0.5 V 2 Cr 0.5 C 2 T x MXenes using an element doping strategy. Thanks to their suitable dielectric constant, lattice distortion, and a large amount of defects caused by multiple transition metal atoms, results in an increase in polarization loss, enhanced impedance matching, and increased electromagnetic (EM) wave absorption capability. The experimental results showed that few-layer TiVCrC 2 T x with a thickness of 3.19 mm and operating frequency as 6.88 GHz can achieve a minimum reflection loss (RL min ) of −57.8 dB. Additionally, it has an effective absorption bandwidth (EAB) of 2.88 GHz. On the other hand, few-layer Ti 0.5 V 2 Cr 0.5 C 2 T x with a thickness of 1.95 mm and operating at a frequency of 10.72 GHz has an RL min of −52.75 dB and an EAB of 1.44 GHz. The advantages of the element doping strategy in enhancing the microwave absorption performance of MXene are demonstrated by its excellent EM wave absorption capability, thin matching thickness, and low filling amounts of only 30 wt percent. These results suggest that doped MXene showed highly promising application in the field of EM wave absorption.
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