Top-seeded solution growth and characterization of β-Ga2O3

β-Ga2O3 is an ultra-wide bandgap semiconductor with immense potential applications in high voltage, electronic devices, and deep-ultraviolet optoelectronic devices, etc. However, to date, the growth of bulk β-Ga2O3 crystals has predominantly utilized melt methods, which are heavily dependent on specific growth vessels. In this work, bulk crystal β-Ga2O3 with a size of 7 × 13 × 4 mm3 is grown using TeO2-Li2CO3 as flux by a top-seeded solution growth (TSSG) method for the first time. It is noteworthy that the saturation point of β-Ga2O3 in the flux has been reduced to 1023 K, significantly lower than its melting point of 2073 K. The resulting β-Ga2O3 crystal exhibits well-formed faces, predominantly the (010), (100), (01(-)1), and (11(-)1(-)) forms, which closely align with the ideal morphological predictions made by the Bravais-Friedel and Donnay-Harker methods.The full-width at half maximum (FWHM) of the rocking curves for the (010) oriented plane is determined to be 140.4″. This work provides a potential β-Ga2O3 crystal growth method with a little platinum loss at a low temperature.