ZnIn2S4 nanostructure grown on electronegative h-BN for highly efficient photocatalytic hydrogen evolution

The photo-corrosion issue inherent in metal sulfide semiconductors is quite pronounced, making the enhancement of electron-hole pair separation efficiency in these photocatalysts a pivotal strategy for boosting photocatalytic hydrogen production. This study introduces a novel approach where hexagonal boron nitride ( h -BN) acts as a substrate for the in situ growth of ZnIn 2 S 4 nanostructures, resulting in the formation of h -BN@ZnIn 2 S 4 (BN@ZIS) nanocomposites. The electronegativity of h -BN nanosheets is harnessed to facilitate the recombination or electrostatic attraction of photogenerated holes in the ZnIn 2 S 4 photocatalyst. This strategy effectively promotes the separation of photogenerated electron-hole pairs, which is crucial for enhancing photocatalytic performance. The microstructure, morphology and optical properties of BN@ZIS nanocomposites were meticulously investigated. The findings reveal that the incorporation of h -BN nanosheets loads to a more uniform dispersion of the ZnIn 2 S 4 nanostructure, which not only increases the specific surface area but also fosters a tight heterojunction interface between h -BN and ZnIn 2 S 4 . In conclusion, the photocatalytic hydrogen production capabilities of the BN@ZIS nanocomposites were rigorously evaluated. Pure h -BN lacks photocatalytic hydrogen production activity. Conversely, the optimized BN@ZIS composite demonstrated a remarkable enhancement, exhibiting a photocatalytic efficiency that is 9.65 times greater than that of pristine ZnIn 2 S 4 . Furthermore, a plausible mechanism by which BN@ZIS augments photocatalytic hydrogen production has been proposed. This strategy, leveraging the synergistic interaction between h -BN and ZnIn 2 S 4 , is anticipated to be applicable to other semiconductor systems, opening avenues for the advancement of photocatalytic technologies.