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Temperature driven p- to n-type transition of In2O3/NixOy nanocavity structure for H2 gas sensors

Journal 2025 · IF 7.7 · 发表于 2025 年 7 月 10 日
作者: Yuxiao Jiang,Kelin Hu,Jing Zhang,Tao He,Bin Yu,Xinyuan Li,Jiarong Yang
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摘要

This research focused on the synthesis of In 2 O 3 /Ni x O y nanocomposites utilizing the conventional template method. The resulting gas sensor, designed for H 2 detection, demonstrates a sensing behavior that is dependent on temperature. Various characterization techniques were employed to analyze the synthesized In 2 O 3 /NiO composite materials. The results obtained from tests conducted at different temperatures reveal that the sensor maintains a stable n-type response for H 2 at temperatures exceeding 240°C, while exhibiting an atypical p-type response at lower temperatures. This transition in adsorption behavior enables the In 2 O 3 /Ni x O y composites to function as a dual-mode sensor capable of detecting H 2 . The temperature-induced transformation is likely attributable to the interplay of several mechanisms. This article elucidates this phenomenon by examining factors such as activation energy, TGA/DSC, adsorbed oxygen, heterojunction formation, and humidity effects. This study contributes to the understanding of the transformation mechanisms underlying MOS gas sensing behavior.

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