Centimeter-scale heteroepitaxy of monolayer MoS2 on SiC yielding high-rectifying and photovoltaic heterojunction

Heterojunctions based on transition metal dichalcogenides (TMDs) and wide-bandgap semiconductors such as silicon carbide (SiC) offer significant opportunities for next-generation optoelectronic and power devices, leveraging the atomically thin, bandgap-tunable nature of TMDs and the thermal, electrical, and radiation robustness of SiC. However, achieving wafer-scale, orientation-controlled epitaxial growth of monolayer TMDs on SiC substrates remains challenging due to the large lattice mismatch and complex interface chemistry. Here, we demonstrate the epitaxial growth of 3 × 3 cm 2 monolayer (ML) –MoS 2 on 4H-SiC via chemical vapor deposition (CVD). Combined with structural characterizations and theoretical calculations, the Centimeter-scale ML-MoS 2 exhibits well-defined domain orientations of 0°, 30°, and 60° on the SiC surface. Owing to the low interfacial binding energy, the as-grown ML-MoS 2 can be readily transferred from the SiC substrate in a scalable, etch-free manner. While without any transfer process, the MoS 2 /SiC heterojunction exhibits a rectification ratio up to 10 7 and a pronounced photovoltaic effect under 340 nm and 532 nm laser illumination. These results offer insights into 2D/3D heteroepitaxy on wide-bandgap semiconductors and enable scalable integration of high-performance heterojunctions.