摘要
Persistent luminescence (PersL) materials have emerged as an outstanding optical media with versatile applications in data storage, anti-counterfeiting, and beyond. However, their practical implementation is critically hindered by insufficient PersL intensity, a challenge fundamentally rooted in the incomplete understanding of trapping mechanisms. Here, we developed Tb 3+ -activated Ga 4 GeO 8 phosphors with rational defect manipulation via Ln 3+ (Ln = Pr, Eu, Ce, Er) co-doping strategies. Especially, when Eu 3+ /Er 3+ are introduced as lattice distortion agents into Tb 3+ -doped Ga 4 GeO 8 , the phosphors demonstrate dual-band PersL including blue-green PersL from Tb 3+ 5 D 4 → 7 F J transitions (492–620 nm) and red-NIR PersL emission (715 nm) originating from oxygen defect levels. Through systematic exploration of the PersL mechanism, we propose a criterion for effective trapping: stabilizing V O •• defect energy levels by replacing matrix cations with less electronegative species (e.g., Eu 3+ , Er 3+ ), which suppresses non-radiative V O defect states. This study establishes design guidelines for the rational development of high-performance PersL materials.
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