Enhancing safety performance of initiating explosive devices via 3D printed VO2 film based on metal-insulator transition

Initiating explosive devices (IEDs) are crucial in both military and civilian applications for improving the accuracy of controlled detonations. However, the safety of semiconductor bridge (SCB) wire IEDs, which are the most widely used, is increasingly threatened by complex electromagnetic environments. Although protective devices such as thermistors and zener diodes are commonly employed to enhance safety, traditional discrete components can compromise compactness and provide only marginal improvements. The metal-insulator transition properties of vanadium dioxide (VO 2 ) present an innovative approach to enhancing the safety performance of IEDs. Nevertheless, the functional relevance of the VO 2 phase transition in relation to IEDs has garnered limited scientific attention. The VO 2 film fabricated via 3D printing demonstrated resistivity modulation ranging from 2 to 5 orders of magnitude, achieving a stable metallic-state resistance of 1.2 Ω. The results show that this process increases the 5-minute safe current threshold by 90%, from 1 A to 1.9 A, and reduces the temperature generated by the current by approximately 40% when below the safe current threshold. Integrating VO 2 film into IEDs via semiconductor processes significantly enhances safety performance while maintaining detonation capability, demonstrating its effectiveness as a safety modulator in pyrotechnic engineering.