摘要
The electron transport layer (ETL) plays a crucial role in fabricating efficient and stable planar perovskite solar cells (PSCs). Among the various alternatives to TiO 2 for ETLs, tin oxide (SnO 2 ) has emerged as a highly promising candidate due to its outstanding potential. However, improvements in SnO 2 materials remain necessary due to inherent limitations such as low conductivity, high energy barrier, and interfacial defects. In this study, Mg 2+ ions were introduced into SnO 2 to substitute Sn sites, leading to an increase in the open-circuit voltage (V oc ) of perovskite solar cells, and consequently enhancing overall device efficiency. With a Mg doping concentration of 3.0%, the V oc and power conversion efficiency (PCE) of the solar cell reached 1.540 V and 7.17%, respectively. The incorporation of Mg 2+ ions into SnO 2 presents an effective method to improve the performance of SnO 2 ETL in perovskite solar cells while utilizing more environmentally friendly solvents.
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