High-Performance Neuromorphic Phototransistors Based on Electrospinning-Driven La-Doped Indium Oxide Nanofibers

The development of high-performance neuromorphic phototransistors plays a fundamental role in advancing image perception systems by enabling low-latency, event-driven light sensing and accelerating the training of memory-efficient deep neural networks. Here, artificial synaptic phototransistors with synaptic plasticity are fabricated based on La-doped In₂O₃ nanofibers (InLaO NFs), demonstrating an integrated artificial synapse that mimics both central and visual neural functions. The device exhibits not only exceptional electrical performance, with a high field-effect mobility of 7.70 cm²V^-1s^-1, an ultralarge ON/OFF current ratio (>1 × 10⁸), but also a strong photoresponse of 28.2 nA under light illumination. Through excitatory response modes, fundamental biological functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and the transition from short-term plasticity (STP) to long-term plasticity (LTP), are simulated by the synaptic transistor. Furthermore, in optoelectronic co-modulation, the high synaptic weights enable the device to emulate complex neural learning rules relevant to neuromorphic applications, such as classically conditioned reflexes and image recognition tasks. These results highlight the potential of InLaO NFs-based synaptic transistors as promising candidates for bio-inspired synaptic devices and advanced neuromorphic systems.