APTES-Modified Interface Optimization in PbS Quantum Dot SWIR Photodetectors and Its Influence on Optoelectronic Properties

Lead sulfide colloidal quantum dots (PbS QDs) have demonstrated great potential in short-wave infrared (SWIR) photodetectors due to their tunable bandgap, low cost, and broad spectral response. While significant progress has been made in surface ligand modification and defect state passivation, studies focusing on the interface between QDs and electrodes remain limited, which hinders further improvement in device performance. In this work, we propose an interface engineering strategy based on 3-aminopropyltriethoxysilane (APTES) to enhance the interfacial contact between PbS QD films and ITO interdigitated electrodes, thereby significantly boosting the overall performance of SWIR photodetectors. Experimental results demonstrate that the optimal 0.5 h APTES treatment duration significantly enhances responsivity by achieving balanced interface passivation and charge carrier transport. Moreover, The APTES-modified device exhibits a controllable dark current and faster photo-response under 1310 nm illumination. This interface engineering approach provides an effective pathway for the development of high-performance PbS QD-based SWIR photodetectors, with promising applications in infrared imaging, spectroscopy, and optical communication.